Contributions to the large blue emission shift in a GaAsSb type-II laser

被引：24

作者：

Chow, WW ^{[1
]}

Spahn, OB ^{[1
]}

Schneider, HC ^{[1
]}

Klem, JF ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2001年 / 37卷 / 09期

关键词：

quantum-well lasers; semiconductor laser; surfacing emitting laser; type-II quantum well;

D O I：

10.1109/3.945323

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The large blue shift in the emission with excitation in a GaAsSb-based type-II quantum well is investigated experimentally and theoretically. Comparison of theory with experiment is made for lasers with "W" type-II structures. The analysis shows the blue shift to be the result of charge-separation, band-distortion, and many-body interactions. For a high threshold gain, there is an additional contribution from the n=2 subband transition.

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收藏

页码：1178 / 1182

页数：5

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