Fabrication of reflective GaN mesa sidewalls for the application to high extraction efficiency LEDs

被引：25

作者：

Lee, Jae-Soong ^{[1
,2
]}

Lee, Joonhee ^{[1
,2
]}

Kim, Sunghwan ^{[1
,2
]}

Jeon, Heonsu ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea

[2] Seoul Natl Univ, Astron & Inter Univ Semicond Res Ctr, Seoul 151747, South Korea

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期

关键词：

D O I：

10.1002/pssc.200674806

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We proposed and demonstrated a modified GaN light-emitting diode (LED) structure. The structure was made by integrating angled sidewalls to an otherwise conventional LED structure. Various GaN sidewall angles were obtained by adjusting etch conditions and the etched surface roughness was similar to 2 nm. Near-field emission patterns indicated that the angled sidewalls efficiently deflect photons that are initially guided laterally within the GaN epilayer into the off-surface direction. For sidewall angle of 30 degrees, total surface emission strength was improved by a factor exceeding 3. (c) 2007 WILEY-NCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2625 / +

页数：2

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