Fabrication and optical properties of highly ordered ZnO nanodot arrays

被引:45
作者
Xu, WL [1 ]
Zheng, MJ [1 ]
Ding, GQ [1 ]
Shen, WZ [1 ]
机构
[1] Shanghai Jiao Tong Univ, Dept Phys, Lab Condensed Matter Spect & Optoelect Phys, Shanghai 200030, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1016/j.cplett.2005.05.105
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report on the successful fabrication of highly ordered ZnO nanodots on Si(0 0 1) substrates under a low-cost and industrialized technique combining self-organized porous alumina membranes (PAMs) with reactive electron beam evaporation. Scanning electron microscope images reveal the copy of the ZnO nanodot arrays from the PAM masks without the aid of catalysts. In addition to the demonstration of ZnO crystallinity by transmission electron microscopy and micro-Raman measurements, temperature-dependent photoluminescence spectra of ZnO nanodot arrays show high intensity ratio of 400 between the ultraviolet and visible emission due to the low oxygen vacancies (resulting from the oxygen-full growth atmosphere and large surface-to-volume ratio in nanodots). The present technique provides the possibility of realizing good quality ZnO nanodot arrays on different substrates with tunable sizes and morphology. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:37 / 42
页数:6
相关论文
共 34 条
[1]   The study of composition non-uniformity in ternary MgxZn1-xO thin films [J].
Chen, J ;
Shen, WZ ;
Chen, NB ;
Qiu, DJ ;
Wu, HZ .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (30) :L475-L482
[2]   Preparation and phase transformation of highly ordered TiO2 nanodot arrays on sapphire substrates [J].
Chen, PL ;
Kuo, CT ;
Pan, FM ;
Tsai, TG .
APPLIED PHYSICS LETTERS, 2004, 84 (19) :3888-3890
[3]   Periodic array of uniform ZnO nanorods by second-order self-assembly [J].
Chik, H ;
Liang, J ;
Cloutier, SG ;
Kouklin, N ;
Xu, JM .
APPLIED PHYSICS LETTERS, 2004, 84 (17) :3376-3378
[4]   Fabrication of controllable free-standing ultrathin porous alumina membranes [J].
Ding, GQ ;
Zheng, MJ ;
Xu, WL ;
Shen, WZ .
NANOTECHNOLOGY, 2005, 16 (08) :1285-1289
[5]   Artificial control of ZnO nanostructures grown by metalorganic chemical vapor deposition [J].
Fujita, S ;
Kim, SW ;
Ueda, M ;
Fujita, S .
JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) :138-142
[6]   Well-aligned ZnO nanowire arrays fabricated on silicon substrates [J].
Geng, CY ;
Jiang, Y ;
Yao, Y ;
Meng, XM ;
Zapien, JA ;
Lee, CS ;
Lifshitz, Y ;
Lee, ST .
ADVANCED FUNCTIONAL MATERIALS, 2004, 14 (06) :589-594
[7]   Capping process of InAs/GaAs quantum dots studied by cross-sectional scanning tunneling microscopy [J].
Gong, Q ;
Offermans, P ;
Nötzel, R ;
Koenraad, PM ;
Wolter, JH .
APPLIED PHYSICS LETTERS, 2004, 85 (23) :5697-5699
[8]   Fabrication of indium nitride nanodots using anodic alumina templates [J].
Guo, QX ;
Mei, XY ;
Ruda, H ;
Tanaka, T ;
Nishio, M ;
Ogawa, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (5B) :L508-L510
[9]   Temperature dependent exciton photoluminescence of bulk ZnO [J].
Hamby, DW ;
Lucca, DA ;
Klopfstein, MJ ;
Cantwell, G .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (06) :3214-3217
[10]   Room-temperature ultraviolet nanowire nanolasers [J].
Huang, MH ;
Mao, S ;
Feick, H ;
Yan, HQ ;
Wu, YY ;
Kind, H ;
Weber, E ;
Russo, R ;
Yang, PD .
SCIENCE, 2001, 292 (5523) :1897-1899