Fabrication of indium nitride nanodots using anodic alumina templates

被引：13

作者：

Guo, QX

Mei, XY

Ruda, H

Tanaka, T

Nishio, M

Ogawa, H

机构：

[1] Saga Univ, Fac Sci & Engn, Dept Elect & Elect Engn, Saga 8408502, Japan

[2] Univ Toronto, Dept Mat Sci & Engn, Energenius Ctr Adv Nanotechnol, Toronto, ON M5S 3E4, Canada

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 5B期

关键词：

indium nitride; semiconductor; nanodots; anodic alumina template; reactive sputtering;

D O I：

10.1143/JJAP.42.L508

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A highly ordered uniform InN nanodot array was successfully grown by reactive sputtering using an anodic nanohole channel alumina (NCA) template. The nanodot array replicated the hexagonal lattice pattern of the NCA template with a period space of nanometer scale. The simplicity, flexibility, and practicality of this technique make it a prospective method for developing future optical and electronic devices of III-V nitride semiconductors.

引用

页码：L508 / L510

页数：3

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