Cathodoluminescence study of highly ordered arrays of InGaAs quantum dots

被引：6

作者：

Guo, QX ^{[1
]}

Mei, XY

Ogawa, H

Ruda, H

机构：

[1] Saga Univ, Fac Sci & Engn, Dept Elect & Elect Engn, Saga 8408502, Japan

[2] Univ Toronto, Energenius Ctr Adv Nanotechnol, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 12期

关键词：

InGaAs; quantum dots; molecular beam epitaxy; anodic alumina template; cathodoluminescence;

D O I：

10.1143/JJAP.41.7297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have examined the optical properties of highly ordered arrays of nanosized InGaAs quantum dots (QDs) with cathodoluminescence (CL) techniques. The InGaAs QDs were formed on GaAs (001) substrates by molecular beam epitaxial growth using alumina nanochannel array (NCA) templates. The behavior of the CL luminescence was studied by temperature and electron beam scan area dependence. The activation energy of the InGaAs QD luminescence was determined to be 43.1 meV. The CL results indicate that the InGaAs QDs are rather uniform with identical electronic structure.

引用

页码：7297 / 7300

页数：4

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