Modelling on plasma immersion implantation of trenches

被引：12

作者：

Keller, G ^{[1
]}

Paulus, M ^{[1
]}

Mändl, S ^{[1
]}

Stritzker, B ^{[1
]}

Rauschenbach, B ^{[1
]}

机构：

[1] Univ Augsburg, Inst Phys, D-86159 Augsburg, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 148卷 / 1-4期

关键词：

plasma immersion implantation; simulation; trenches; concentration distribution;

D O I：

10.1016/S0168-583X(98)90668-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Plasma immersion ion implantation (PIII) is a technique for surface modification of three dimensional objects where the spatial dose distribution and homogeneity is a priori unknown. Here we present model calculations for trenches. determining the retained dose, the angle of incidence and the depth profiles. In the trenches, especially in the side walls, a reduced dose is obtained as the plasma sheath expands out of the trench during the pulse. A reduction of the pulse rise time from 2 to 0.1 mu s results in an increase of the ion range of up to 100%. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：64 / 68

页数：5

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