Two-dimensional electron gas at InAs(100)1x2/1x4Pb

被引：12

作者：

Layet, JM

Carrere, M

Kim, HJ

Johnson, RL

Belkhou, R

Zhilin, V

Aristov, VY

Le Lay, G

机构：

[1] Univ Provence, CNRS, PIIM, Ctr St Jerome, F-13397 Marseille 20, France

[2] Univ Hamburg, Inst Expt Phys 2, D-22761 Hamburg, Germany

[3] Ctr Univ Paris Sud, Utilisat Rayonnement Electromagnet Lab, F-91405 Orsay, France

[4] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia

[5] CNRS, CRMC2, F-13288 Marseille 09, France

[6] Univ Provence, UFR SM, Ctr St Charles, Marseille, France

来源：

SURFACE SCIENCE | 1998年 / 402卷 / 1-3期

关键词：

electron gas; indium arsenide;

D O I：

10.1016/S0039-6028(97)00996-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Upon deposition of one lead monolayer on the clean, In-terminated InAs(100)4 x 2/c(8 x 2) surface, we have obtained a new 1 x 2/1 x 4 superstructure and have studied its electronic properties by synchrotron radiation photoelectron spectroscopy (valence bands and In 4d plus Pb 5d core levels). The markedly increased emission in the vicinity of the Fermi level for this reconstruction, as compared to the bare surface, and its narrow localization in k space are the signature of the formation of a strong two-dimensional electron gas in the sub-surface region. (C) 1998 Elsevier Science B.V. All rights reserved.

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页码：724 / 728

页数：5

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