High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate

被引：87

作者：

Iso, Kenji ^{[1
]}

Yamada, Hisashi

Hirasawa, Hirohiko

Fellows, Natalie

Saito, Makoto

Fujito, Kenji

Denbaars, Steven P.

Speck, James S.

Nakamura, Shuji

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Mitsubishi Chem Co Ltd, Optoelect Lab, Ushiku, Ibaraki 3001295, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 36-40期

关键词：

m-plane; nonpolar; blue LED; GaN bulk substrate; MOW barrier thickness;

D O I：

10.1143/JJAP.46.L960

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Improved nonpolar m-plane (1100) light emitting diode (LED) with a thick InGaN active layer of 8 nm and a thick GaN barrier layer of 37.5 nm for multi-quantum-well (MQW) structure have been fabricated on low extended defect bulk m-plane GaN substrates using metal organic chemical vapor deposition (MOCVD). The peak wavelength of the electroluminescence (EL) emission from the packaged LED was 468 nm. The output power and external quantum efficiency (EQE) were 8.9 mW and 16.8%, respectively, at a DC driving current of 20 mA.

引用

页码：L960 / L962

页数：3

共 18 条

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