Back-channel-type scanning charge pumping method for characterization of interface traps in silicon-on-insulator wafer

被引：4

作者：

Yoshida, H ^{[1
]}

Sasakura, H ^{[1
]}

Yabuuchi, T ^{[1
]}

Takami, T ^{[1
]}

Uchihashi, T ^{[1
]}

Kishino, S ^{[1
]}

机构：

[1] Himeji Inst Technol, Fac Engn, Dept Elect, Himeji, Hyogo 6712201, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 12期

关键词：

D O I：

10.1063/1.1399311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A scanning charge pumping method using a back channel is proposed for the characterization of interface traps in a silicon-on-insulator (SOI) wafer. In this method, a contactless gate electrode is used instead of the permanent gate electrode of normal metal-oxide-semiconductor transistors, allowing the interface trap density of SOI wafers to be mapped. A preliminary study is performed using a sample device with many permanent gate electrodes fabricated on an oxidized SOI wafer. The results demonstrate that the back-channel-type scanning charge pumping method is effective in characterizing interface trap density and is potentially applicable to SOI wafer inspection. (C) 2001 American Institute of Physics.

引用

页码：1825 / 1827

页数：3

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