Quaternary AlInGaN multiple quantum wells for ultraviolet light emitting diodes

被引：42

作者：

Zhang, JP ^{[1
]}

Adivarahan, V

Wang, HM

Fareed, Q

Kuokstis, E

Chitnis, A

Shatalov, M

Yang, JW

Simin, G

Khan, MA

Shur, M

Gaska, R

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[2] Sensor Elect Technol Inc, Latham, NY 12110 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2001年 / 40卷 / 9AB期

关键词：

quaternary; AllnGaN; MQW; reciprocal space mapping; UV LED; AFM;

D O I：

10.1143/JJAP.40.L921

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a novel pulsed atomic layer epitaxy (PALE) growth technique for quaternary AlInGaN films for ultraviolet optoelectronics applications. Using the PALE approach, quaternary AlInGaN/AlInGaN multiple quantum wells (MQWs) were successfully gown over sapphire substrates. These were characterized using X-ray diffraction, atomic force microscopy, and photoluminescence to establish structural and optical quality. Incorporating the PALE grown quaternary MQWs as the active layer we also demonstrated ultraviolet electroluminescence at 343 nm with an output power up to 0.12 mW at room temperature.

引用

页码：L921 / L924

页数：4

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