Recent advances in hot-wire CVD R&D at NREL: From 18% silicon heterojunction cells to silicon epitaxy at glass-compatible temperatures

被引：19

作者：

Branz, Howard M. ^{[1
]}

Teplin, Charles W. ^{[1
]}

Young, David L. ^{[1
]}

Page, Matthew R. ^{[1
]}

Iwaniczko, Eugene ^{[1
]}

Roybal, Lorenzo ^{[1
]}

Bauer, Russell ^{[1
]}

Mahan, A. Harv ^{[1
]}

Xu, Yueqin ^{[1
]}

Stradins, Pauls ^{[1
]}

Wang, Tihu ^{[1
]}

Wang, Qi ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Natl Ctr Photovolt, Silicon Mat & Devices Grp, Golden, CO 80401 USA

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 05期

关键词：

heterojunctions; solar cells; epitaxial growth; silicon; hot-wire deposition; crystallization; efficiency; passivation;

D O I：

10.1016/j.tsf.2007.06.115

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Our research aiming to improve silicon photovoltaic materials and devices extensively utilizes hot-wire chemical vapor deposition (HWCVD). We have recently achieved 18.2% heterojunction silicon solar cells by applying HWCVD a-Si:H front and back contacts to textured p-type silicon wafers. This is the best reported p-wafer heterojunction solar cell by any technique. We have also dramatically improved the quality of HWCVD silicon epitaxy and recently achieved I I gm of epitaxial growth at a rate of 110 nm/min. Published by Elsevier B.V.

引用

页码：743 / 746

页数：4

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