Real-time optical spectroscopy study of solid-phase crystallization in hydrogenated amorphous silicon

被引:195
作者
Stradins, P. [1 ]
Young, D. L. [1 ]
Yan, Y. [1 ]
Iwaniczko, E. [1 ]
Xu, Y. [1 ]
Reedy, R. C. [1 ]
Branz, H. M. [1 ]
Wang, Qi [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
D O I
10.1063/1.2357029
中图分类号
O59 [应用物理学];
学科分类号
摘要
Real-time, in situ, optical reflectance spectroscopy is applied to investigate the kinetics of both random and epitaxial solid-phase crystallization of hydrogenated amorphous silicon annealed between 480 and 620 degrees C, with confirmation of key results by electron microscopy. Changes in the visible and near infrared interference fringes monitor H effusion and bulk phase changes, while the ultraviolet reflection peaks monitor the phase at the film surface. Most H effuses with an activation energy of 1.6 eV before crystal nucleation, and crystallite growth occurs with an activation energy of 3.4 eV. The authors determine the time-temperature-thickness diagram for random crystallization and solid-phase epitaxy. (c) 2006 American Institute of Physics.
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页数:3
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