Monolithic InP-Based tunable filter with 10-nm bandwidth for optical data interconnects in the 1550-nm band

被引:20
作者
Chitica, N [1 ]
Daleiden, J
Strassner, M
Streubel, K
机构
[1] Royal Inst Technol, Lab Semicond Mat, Dept Elect, S-16440 Kista, Sweden
[2] Mitel Semicond AB, S-17525 Jarfalla, Sweden
关键词
epitaxial layers; Fabry-Perot resonators; micro-electromechanical devices; micromachining; optical filters; optical interconnections; tunable filters;
D O I
10.1109/68.759406
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the design and fabrication of micromechanically tunable filters with a 10-nm bandwidth for the 1550nm wavelength range. The electrostatic actuation provides a tuning range of 40 nm and a low actuation power. The filters consist of a monolithic, vertical Fabry-Perot resonant cavity based on an epitaxial InGaAsP-InP Bragg reflector. An actuable InP micromechanical structure suspended over a 1 lambda-thick air-gap provides for the tuning of the cavity. Our design alms primarily for a device that is simple, robust and that can be integrated with an InP-based photodetector or emitter in a low-cost component for optical data interconnects.
引用
收藏
页码:584 / 586
页数:3
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