Synchronization and chaos induced by resonant tunneling in GaAs/AlAs superlattices

被引：127

作者：

Zhang, YH ^{[1
]}

Kastrup, J ^{[1
]}

Klann, R ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,RES CTR QUANTUM EFFECT ELECT,MEGURO KU,TOKYO 152,JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.77.3001

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A semiconductor superlattice represents an ideal one-dimensional nonlinear dynamical system with a large number of degrees of freedom. The effective nonlinear coupling originates from sequential resonant tunneling between adjacent wells. We have observed spontaneous chaotic and periodic current oscillations in a doped GaAs/AlAs superlattice by changing only the applied bias. When the system is driven with an incommensurate sinusoidal voltage for a fixed bias, transitions between synchronization and chaos are observed via pattern forming bifurcations. A driving signal of sufficiently large amplitude can suppress the occurrence of chaos and produce a synchronized oscillation mode with a subharmonic of the driving frequency.

引用

页码：3001 / 3004

页数：4

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