Growth morphology and structure of bismuth thin films on GaSb(110)

被引：7

作者：

van Gemmeren, T

Lottermoser, L

Falkenberg, G

Bunk, O

Johnson, RL

Feidenhans'l, R

Nielsen, M

机构：

[1] Univ Hamburg, Inst Expt Phys 2, D-22761 Hamburg, Germany

[2] Riso Natl Lab, Condensed Matter Phys & Chem Dept, DK-4000 Roskilde, Denmark

来源：

SURFACE SCIENCE | 1998年 / 414卷 / 1-2期

关键词：

bismuth; gallium antimonide; low index single crystal surfaces; metal-semiconductor interfaces; scanning tunneling microscopy; soft X-ray photoelectron spectroscopy; surface structure; morphology; roughness and topography; X-ray scattering; diffraction; and reflection;

D O I：

10.1016/S0039-6028(98)00516-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Photoelectron spectroscopy, low-energy electron diffraction, scanning tunneling microscopy and surface X-ray diffraction were used to investigate the growth of thin layers of bismuth on GaSb(110). At submonolayer coverages, growth of two-dimensional islands occurs. A uniform (1 x I)-reconstruction is formed at a coverage of one monolayer. A structural model derived from X-ray diffraction data is presented for this phase. The (1 x I)-phase consists of zigzag chains of bismuth atoms bonded alternately to the surface cations and anions of the bulk-terminated unrelaxed (110) surface. We propose that the (1 x 1)-phases formed by antimony and bismuth adsorbates on (110) surfaces of other III-V compound semiconductors are also described by the epitaxial continued layer model. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：254 / 260

页数：7

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