Nitrogen incorporation kinetics during the sublimation growth of 6H and 4H SiC

被引：40

作者：

Onoue, K ^{[1
]}

Nishikawa, T ^{[1
]}

Katsuno, M ^{[1
]}

Ohtani, N ^{[1
]}

机构：

[1] NIPPON STEEL CORP LTD,ADV TECHNOL RES LABS,SAGAMIHARA,KANAGAWA 229,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 4A期

关键词：

SiC; single crystal; sublimation growth; nitrogen incorporation; surface polarity; polytype; carrier concentration;

D O I：

10.1143/JJAP.35.2240

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitrogen incorporation kinetics during the sublimation boule growth of SiC have been studied in terms of several growth parameters. 6H and 4H SiC crystals were heavily doped with nitrogen as a donor. It was found that the growth rate has little influence on the doping concentration, indicating that nitrogen incorporation is not kinetically Limited at normal growth rates in the sublimation growth. On the other hand, surface polarity and polytype were found to influence the nitrogen incorporation kinetics at the growth front. By optimizing the growth conditions, bulk resistivities as low as 7.6 x 10(-3) Ohm cm and 5.3 x 10(-3)Ohm m were obtained for 6H and 4H SiC, respectively.

引用

页码：2240 / 2243

页数：4

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