Properties of sputtered TaReGe used as an x-ray mask absorber material

被引：7

作者：

Yoshihara, T ^{[1
]}

Kotsuji, S ^{[1
]}

Fujii, K ^{[1
]}

Tsuboi, S ^{[1
]}

Suzuki, K ^{[1
]}

机构：

[1] NEC Corp Ltd, Silicon Syst Res Labs, Tsukuba, Ibaraki 3058501, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 06期

关键词：

D O I：

10.1116/1.590483

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the characteristics of Ta-based amorphous alloy films for use in an x-ray mask absorber. The stress in the TaReGe film can be controlled by changing the concentration of Re, making it easy to obtain low-stress films through deposition with any sputtering system followed by annealing. A required mask contrast can be obtained with a TaReGe film thinner than other Ta-based alloy films because the TaReGe film has a high density and a high mass absorption coefficient. We have achieved 0+/-10 MPa stress control for a TaReGe film by annealing. The TaReGe films showed high durability against various strong acids and developers, and against O-2 plasma. We also demonstrated the fine patterning capability (0.1 mu m) of a TaReGe absorber.. (C) 1998 American Vacuum Society. [S0734-211X(98)15606-8].

引用

页码：3491 / 3494

页数：4

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