Nanostructuring with a high current isotope separator and ion implanter

被引：22

作者：

Chini, TK ^{[1
]}

Datta, D ^{[1
]}

Bhattacharyya, SR ^{[1
]}

Sanyal, MK ^{[1
]}

机构：

[1] Saha Inst Nucl Phys, Surface Phys Div, Kolkata 700064, W Bengal, India

来源：

APPLIED SURFACE SCIENCE | 2001年 / 182卷 / 3-4期

关键词：

Ar bombardment; nanoparticles; ion implanter;

D O I：

10.1016/S0169-4332(01)00420-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The oblique angle Ar bombardment with a high current isotope separator and ion implanter gives rise to nanoscale (400-900 nm) ripple formation on Si(1 0 0) at 80 and 100 keV for the dose of 10(18) ions/cm(2). The most important aspect of our preliminary investigation regarding the beam influencec on ripple wavelength indicates that the meaningful data comparable to the theoretical models can be obtained with homogeneous irradiation via beam sweeping. At 60 keV, Ar bombarded GaAs surface also shows nanoparticle decorated ripples for the dose of 5 x 10(17) ions/cm(2) and at higher dose ripples without nanoparticles. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：313 / 320

页数：8

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