Kinetics of reactive ion etching upon single-walled carbon nanotubes

被引：18

作者：

Kato, Toshiaki ^{[1
]}

Hatakeyama, Rikizo ^{[1
]}

机构：

[1] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808579, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 03期

关键词：

Kinetic parameters - Mathematical models - Plasma enhanced chemical vapor deposition - Reactive ion etching;

D O I：

10.1063/1.2837463

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The remarkable etching reaction of single-walled carbon nanotubes (SWNTs) has been observed in their growth of the parameter-controlled plasma chemical vapor deposition (CVD). The time evolution study of the SWNTs growth leads to establishing a growth equation which can completely express the growth kinetics of SWNTs in the plasma CVD. The growth equation is found to reveal that there are several key parameters which directly affect the etching reaction of SWNTs. Furthermore, such kinetics of the SWNT etching in plasmas can perfectly be explained with a reactive ion etching model.

引用

页数：3

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