Photoluminescence intensity study of n-InP diodes in the accumulation regime

被引：2

作者：

Ahaitouf, A ^{[1
]}

Bath, A ^{[1
]}

Lepley, B ^{[1
]}

Telia, A ^{[1
]}

机构：

[1] UNIV METZ, CTR LORRAIN OPT & ELECTRON SOLIDES, LAB INTERFACES COMPOSANTS & MICROELECTRON, SUPELEC, F-57078 METZ, FRANCE

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1996年 / 156卷 / 01期

关键词：

D O I：

10.1002/pssa.2211560112

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The bias dependence of the photoluminescence (PL) intensity of metal-insulator-n-InP structures is studied. Increasing PL intensity with positive bias is observed. The enhancement of the PL intensity with forward bias results from the enhanced carrier density in the surface accumulation layer and also from improvement of radiative efficiency by the field effect, and eventually from the photon recycling phenomenon. The changes of PL intensity with surface band bending can be explained by using, in the model, an enhanced hole diffusion length in the accumulation region.

引用

收藏

页码：87 / 92

页数：6

相关论文

共 17 条

[1] PHOTOLUMINESCENCE INTENSITY STUDY OF N-INP MIS STRUCTURES REALIZED WITH A NATIVE OXIDE INSULATOR FILM [J].

AHAITOUF, A ;

BATH, A ;

LEPLEY, B .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 127 (01) :159-165

[2] FLAT BAND STATE DETERMINATION OF MIS AND SCHOTTKY INTERFACES BY MODULATED PHOTO-LUMINESCENCE METHOD [J].

ANDO, K ;

YAMAGUCHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) :1335-1336

[3] SURFACE BAND BENDING EFFECTS ON PHOTO-LUMINESCENCE INTENSITY IN N-INP SCHOTTKY AND MIS DIODES [J].

ANDO, K ;

YAMAMOTO, A ;

YAMAGUCHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) :1107-1112

[4] PHOTOLUMINESCENCE CHARACTERIZATION OF STRUCTURES OBTAINED BY MULTIPOLAR PLASMA OXIDATION OF INP [J].

BATH, A ;

AHAITOUF, A ;

LEPLEY, B ;

BELMAHI, M ;

REMY, M ;

RAVELET, S .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 20 (1-2) :148-152

[5] SURFACE RECOMBINATION VELOCITY AND LIFETIME IN INP [J].

BOTHRA, S ;

TYAGI, S ;

GHANDHI, SK ;

BORREGO, JM .

SOLID-STATE ELECTRONICS, 1991, 34 (01) :47-50

[6] EFFECT OF A FINITE RF CONDUCTANCE OF NATIVE OXIDE ON INP METAL-INSULATOR SEMICONDUCTOR ADMITTANCE [J].

BOUCHIKHI, B ;

VALMONT, G ;

MICHEL, C ;

RAVELET, S .

THIN SOLID FILMS, 1987, 150 (2-3) :227-235

[7] SURFACE CHARACTERIZATION OF INP USING PHOTOLUMINESCENCE [J].

CHANG, RR ;

IYER, R ;

LILE, DL .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1995-2004

[8] DIFFUSION LENGTH OF MOLES IN N-INP [J].

DIADIUK, V ;

GROVES, SH ;

ARMIENTO, CA ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1983, 42 (10) :892-894

[9] ROLE OF POLYSULFIDES IN THE PASSIVATION OF THE INP SURFACE [J].

IYER, R ;

LILE, DL .

APPLIED PHYSICS LETTERS, 1991, 59 (04) :437-439

[10] GATED PHOTOLUMINESCENCE METHOD FOR INTERFACE STATE DENSITY DETERMINATION [J].

IYER, R ;

LILE, DL .

APPLIED PHYSICS LETTERS, 1992, 60 (06) :754-756