Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation

被引：10

作者：

Koh, M ^{[1
]}

Shigeta, B ^{[1
]}

Igarashi, K ^{[1
]}

Matsukawa, T ^{[1
]}

Tanii, T ^{[1
]}

Mori, S ^{[1
]}

Ohdomari, I ^{[1
]}

机构：

[1] WASEDA UNIV,KAGAMI MEM LAB MAT SCI & TECHNOL,TOKYO 169,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 11期

关键词：

D O I：

10.1063/1.115696

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Generation rates of Si/SiO2 interface defects, namely, the oxide trapped holes and the interface states, by MeV He single ion irradiation have been investigated quantitatively. From the analysis of threshold voltage shifts induced by single ions of 2 MeV He, the number of the oxide trapped holes and the interface states induced in an n-ch MOSFET in CMOS4007 by a single ion have been estimated to be about 28 and 9, respectively. The hole trapping efficiency is almost 100% at the ion dose below 1 ions/mu m(2). (C) 1996 American Institute of Physics.

引用

页码：1552 / 1554

页数：3

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