Ferroelectric and piezoelectric properties of highly oriented Pb(Zr,Ti)O3 film grown on Pt/Ti/SiO2/Si substrate using conductive lanthanum nickel nitrate buffer layer

被引:5
作者
Choi, JJ [1 ]
Park, GT [1 ]
Park, CS [1 ]
Kim, HE [1 ]
机构
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
关键词
D O I
10.1557/JMR.2005.0087
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The orientation and electrical properties of Pb(Zr,Ti)O-3 thin films deposited on a Pt/Ti/SiO2/Si substrate using lanthanum nickel nitrate as a conductive buffer layer were analyzed. The lanthanum nickel nitrate buffer layer was not only electrically conductive but also effective in controlling the texture of the lead zirconate titanate (PZT) thin film. The role of the lanthanum nickel nitrate buffer layer and its effects on the orientation of the PZT thin film were analyzed by x-ray diffraction, electron beam back-scattered diffraction, and scanning electron microscopy. The annealed lanthanum nickel nitrate buffer layer was sufficiently conducting for use in longitudinal electrode configuration devices. The dielectric, ferroelectric, and piezoelectric properties of the highly (100) oriented PZT films grown with the lanthanum nickel nitrate buffer layer were measured and compared with those of (111) and (100) oriented PZT films deposited without a buffer layer.
引用
收藏
页码:726 / 733
页数:8
相关论文
共 19 条
[11]   Measurement of piezoelectric coefficients of lead zirconate titanate thin films by strain-monitoring pneumatic loading method [J].
Park, GT ;
Choi, JJ ;
Ryu, J ;
Fan, HQ ;
Kim, HE .
APPLIED PHYSICS LETTERS, 2002, 80 (24) :4606-4608
[12]  
POLLA DL, 1996, MRS BULL, V21, P759
[13]   LOW-TEMPERATURE ELECTRONIC-PROPERTIES OF A NORMAL CONDUCTING PEROVSKITE OXIDE (LANIO3) [J].
RAJEEV, KP ;
SHIVASHANKAR, GV ;
RAYCHAUDHURI, AK .
SOLID STATE COMMUNICATIONS, 1991, 79 (07) :591-595
[14]   EFFECT OF CRYSTALLOGRAPHIC ORIENTATION ON FERROELECTRIC PROPERTIES OF PBZR0.2TI0.8O3 THIN-FILMS [J].
RAMESH, R ;
SANDS, T ;
KERAMIDAS, VG .
APPLIED PHYSICS LETTERS, 1993, 63 (06) :731-733
[15]   Piezoelectric properties of rhombohedral Pb(Zr, Ti)O3 thin films with (100), (111), and "random" crystallographic orientation [J].
Taylor, DV ;
Damjanovic, D .
APPLIED PHYSICS LETTERS, 2000, 76 (12) :1615-1617
[16]   PbZr0.5Ti0.5O3/La0.5Sr0.5CoO3 heterostructures prepared by chemical solution routes on silicon with no fatigue polarization [J].
Wang, GS ;
Meng, XJ ;
Sun, JL ;
Lai, ZQ ;
Yu, J ;
Guo, SL ;
Cheng, JG ;
Tang, J ;
Chu, JH .
APPLIED PHYSICS LETTERS, 2001, 79 (21) :3476-3478
[17]   Effects of (100)-textured LaNiO3 electrode on the deposition and characteristics of PbTiO3 thin films prepared by rf magnetron sputtering [J].
Wu, CM ;
Hong, TJ ;
Wu, TB .
JOURNAL OF MATERIALS RESEARCH, 1997, 12 (08) :2158-2164
[18]   Novel Pb(Ti, Zr)O3(PZT) crystallization technique using flash lamp for ferroelectric RAM (FeRAM) embedded LSIs and one transistor type FeRAM devices [J].
Yamakawa, K ;
Imai, K ;
Arisumi, O ;
Arikado, T ;
Yoshioka, M ;
Owada, T ;
Okumura, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (4B) :2630-2634
[19]   PREPARATION OF (100)-ORIENTED METALLIC LANIO3 THIN-FILMS ON SI SUBSTRATES BY RADIO-FREQUENCY MAGNETRON SPUTTERING FOR THE GROWTH OF TEXTURED PB(ZR0.53TI0.47)O-3 [J].
YANG, CC ;
CHEN, MS ;
HONG, TJ ;
WU, CM ;
WU, JM ;
WU, TB .
APPLIED PHYSICS LETTERS, 1995, 66 (20) :2643-2645