Lateral current injection lasers: Underlying mechanisms and design for improved high-power efficiency

被引:7
作者
Sargent, EH [1 ]
Tan, GL [1 ]
Xu, JM [1 ]
机构
[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 1A4, Canada
关键词
OEIC's; optoelectronic integration; semiconductor device modeling; semiconductor lasers;
D O I
10.1109/50.721073
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The lateral current injection (LCI) laser-a promising technology for enabling optoelectronic integrated circuits and photonic devices with novel functionalities-is studied by comparison with conventional vertical injection devices. Fully self-consistent two-dimensional (2-D) simulations of lateral and vertical lasers reveal physical effects unique to the lateral injection class of devices, We find that 1) strong lateral carrier confinement is critical to efficient LCI laser operation, even if the active region is nide, in view of ambipolar effects, 2) current paths in parallel with the active region, even if they consist of high-bandgap intrinsic material, may nevertheless admit significant parasitic leakage even at moderate injection levels, and 3) a straightforward, but powerful, solution to the problem of premature roll-off in lasing efficiency may be achieved via heavy contact doping,without significantly increasing modal free-carrier absorption.
引用
收藏
页码:1854 / 1864
页数:11
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