Effect of Ga/In ratio on the optical and electrical properties of GaInZnO thin films grown on SiO2/Si substrates

被引：37

作者：

Kang, Donghun ^{[1
]}

Song, Ihun

Kim, Changjung

Park, Youngsoo

Kang, Tae Dong

Lee, Ho Suk

Park, Jun-Woo

Baek, Seoung Ho

Choi, Suk-Ho

Lee, Hosun

机构：

[1] Samsung Adv Inst Technol, Semicond Device Mat Lab, Suwon 440600, South Korea

[2] Kyung Hee Univ, Dept Phys, Suwon 446701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1063/1.2773952

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous GaInZnO and polycrystalline ZnO thin films are grown by rf magnetron sputtering. Their optical properties are investigated by spectroscopic ellipsometry. The optical gap of the GaInZnO film increases with the increase of Ga content and by annealing. These are attributed to the large band-gap energy of Ga2O3 and the structural relaxation after annealing, respectively. The changes in optical properties show a strong correlation to the device characteristics of GaInZnO thin film transistors: The turn-on voltage increases as the optical gap increases with increasing Ga/In ratio. This study shows that the GaInZnO thin films are as excellent as transparent oxide semiconductors.(c) 2007 American Institute of Physics.

引用

页数：3

共 18 条

[1] Optical properties of gallium oxide films deposited by electron-beam evaporation [J].

Al-Kuhaili, MF ;

Durrani, SMA ;

Khawaja, EE .

APPLIED PHYSICS LETTERS, 2003, 83 (22) :4533-4535

[2] Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates [J].

Alivov, YI ;

Kalinina, EV ;

Cherenkov, AE ;

Look, DC ;

Ataev, BM ;

Omaev, AK ;

Chukichev, MV ;

Bagnall, DM .

APPLIED PHYSICS LETTERS, 2003, 83 (23) :4719-4721

[3] OPTICAL-PROPERTIES OF THIN-FILMS [J].

ASPNES, DE .

THIN SOLID FILMS, 1982, 89 (03) :249-262

[4] Investigations on the optical constants of indium oxide thin films prepared by ultrasonic spray pyrolysis [J].

Girtan, M .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 118 (1-3) :175-178

[5] Structural, energetic, electronic, bonding, and vibrational properties of Ga3O, Ga3O2, Ga3O3, Ga2O3, and GaO3 clusters [J].

Gowtham, S ;

Deshpande, M ;

Costales, A ;

Pandey, R .

JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (31) :14836-14844

[6] Carbon nanotubes as Schottky barrier transistors [J].

Heinze, S ;

Tersoff, J ;

Martel, R ;

Derycke, V ;

Appenzeller, J ;

Avouris, P .

PHYSICAL REVIEW LETTERS, 2002, 89 (10)

[7] Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation [J].

Herzinger, CM ;

Johs, B ;

McGahan, WA ;

Woollam, JA ;

Paulson, W .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (06) :3323-3336

[8] Modeling of grain boundary barrier modulation in ZnO invisible thin film transistors [J].

Hossain, FM ;

Nishii, J ;

Takagi, S ;

Sugihara, T ;

Ohtomo, A ;

Fukumura, T ;

Koinuma, H ;

Ohno, H ;

Kawasaki, M .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4) :911-915

[9] Parameterization of the optical functions of amorphous materials in the interband region [J].

Jellison, GE ;

Modine, FA .

APPLIED PHYSICS LETTERS, 1996, 69 (03) :371-373

[10] Development of a parametric optical constant model for Hg1-xCdxTe for control of composition by spectroscopic ellipsometry during MBE growth [J].

Johs, B ;

Herzinger, CM ;

Dinan, JH ;

Cornfeld, A ;

Benson, JD .

THIN SOLID FILMS, 1998, 313 :137-142

← 1 2 →