Simple model for anisotropic step growth

被引:11
作者
Heinonen, J
Bukharev, I
Ala-Nissila, T [1 ]
Kosterlitz, JM
机构
[1] Aalto Univ, Univ Helsinki, Helsinki Inst Phys, POB 9, FIN-00014 Helsinki, Finland
[2] Brown Univ, Dept Phys, Providence, RI 02912 USA
[3] Aalto Univ, Phys Lab, FIN-02150 Espoo, Finland
关键词
D O I
10.1103/PhysRevE.57.6851
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
We consider a simple model for the growth of isolated steps on a vicinal crystal surface. It incorporates diffusion and drift of adatoms on the terrace, and strong step and kink edge barriers. Using a combination of analytic methods and Monte Carlo simulations, we study the morphology of growing steps in detail. In particular, under typical molecular beam epitaxy conditions the step morphology is linearly unstable in the model and develops fingers separated by deep cracks. The vertical roughness of the step:grows linearly in time, while horizontally the fingers coarsen proportional to t(0.33). We develop scaling arguments to study the saturation of the ledge morphology for a finite width and length of the terrace.
引用
收藏
页码:6851 / 6858
页数:8
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