Drastic Improvement in Wettability of 6,13-Bis(triisopropylsilylethynyl)pentacene by Addition of Silica Nanoparticles for Solution-Processable Organic Field-Effect Transistors

被引:25
作者
Yamazaki, Saori [1 ,2 ]
Hamada, Takashi [2 ]
Nagase, Takashi [2 ,3 ]
Tokai, Sakae [1 ]
Yoshikawa, Masashi [2 ]
Kobayashi, Takashi [2 ,3 ]
Michiwaki, Yoshiki [4 ]
Watase, Seiji [5 ]
Watanabe, Mitsuru [5 ]
Matsukawa, Kimihiro [5 ]
Naito, Hiroyoshi [2 ,3 ]
机构
[1] Citizen Holdings Co Ltd, Tokorozawa, Saitama 3598511, Japan
[2] Osaka Prefecture Univ, Dept Phys & Elect, Sakai, Osaka 5998531, Japan
[3] Osaka Prefecture Univ, Res Inst Mol Elect Devices, Sakai, Osaka 5998531, Japan
[4] Fuso Chem Co Ltd, Kyoto Res Ctr, Kyoto 6200853, Japan
[5] Osaka Municipal Tech Res Inst, Dept Elect Mat, Osaka 5368553, Japan
关键词
THIN-FILM TRANSISTORS; GATE INSULATORS; PENTACENE;
D O I
10.1143/APEX.3.091602
中图分类号
O59 [应用物理学];
学科分类号
摘要
It is essential to control the wettability of soluble organic semiconductors on polymer gate dielectrics to realize low-cost, flexible, and large-area electronic circuits employing organic field-effect transistors using solution processes. We find that the addition of a small amount of silica nanoparticles (SNPs) drastically improves the wettability of the soluble organic semiconductor of 6,13-bis(triisopropylsilylethynyl)pentacene onto the hydrophobic polymer gate dielectric of poly(methylsilsesquioxane) in the spin-coating process. The improvement in wettability by the addition of SNPs is also demonstrated in the ink-jet printing process, which allows the direct patterning of soluble organic semiconductors on polymer gate dielectrics. (c) 2010 The Japan Society of Applied Physics
引用
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页数:3
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