Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5

被引：72

作者：

Ielmini, D. ^{[1
,2
]}

Lavizzari, S. ^{[1
,2
]}

Sharma, D. ^{[1
,2
]}

Lacaita, A. L. ^{[3
]}

机构：

[1] Politecn Milan, Dipartimento Elettr & Informat, I-20133 Milan, Italy

[2] IUNET, I-20133 Milan, Italy

[3] Politecn Milan, CNR, IFN, I-20133 Milan, Italy

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 19期

关键词：

D O I：

10.1063/1.2930680

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural relaxation (SR) process in an amorphous chalcogenide material (Ge2Sb2Te5) is studied by electrical measurements on phase-change memory devices. SR induces a change in the conduction regime from Poole to Poole-Frenkel transport, evidencing a temperature accelerated defect-annihilation process. Based on an Arrhenius kinetics with distributed activation energies, a temperature-acceleration law is shown, relating the time to reach a specific relaxed state to the temperature during isothermal experiments. This law is demonstrated comparing the time evolution of resistance for different temperatures. These results allow for a significant time reduction in reliability testing of devices and materials affected by SR. (c) 2008 American Institute of Physics.

引用

页数：3

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