Etching submicrometer trenches by using the Bosch process and its application to the fabrication of antireflection structures

被引：121

作者：

Chang, CL ^{[1
]}

Wang, YF

Kanamori, Y

Shih, JJ

Kawai, Y

Lee, CK

Wu, KC

Esashi, M

机构：

[1] Natl Taiwan Univ, Dept Bioind Mechatron Engn, Taipei, Taiwan

[2] Natl Taiwan Univ, Inst Appl Mech, Taipei, Taiwan

[3] Tohoku Univ, Dept Mechatron & Precis Engn, Sendai, Miyagi 980, Japan

[4] Tohoku Univ, NiCHe, Sendai, Miyagi 980, Japan

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2005年 / 15卷 / 03期

关键词：

D O I：

10.1088/0960-1317/15/3/020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports solutions to the issues of profile control, microloading effect and suppression of the sidewall roughness of submicrometer trenches by modifying the regular conditions of the Bosch process that is often employed in the inductively coupled plasma (ICP) deep reactive ion etching (DRIE) system. Additionally, under the modified processing conditions, a high efficient antireflection structure can be fabricated.

引用

页码：580 / 585

页数：6

共 21 条

[1] High aspect-ratio combined poly and single-crystal silicon (HARPSS) MEMS technology [J].

Ayazi, F ;

Najafi, K .

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2000, 9 (03) :288-294

[2] Anisotropic silicon trenches 300-500 μm deep employing time multiplexed deep etching (TMDE) [J].

Ayón, AA ;

Zhang, X ;

Khanna, R .

SENSORS AND ACTUATORS A-PHYSICAL, 2001, 91 (03) :381-385

[3]

Bayt R., 1998, Technical Digest. Solid-State Sensor and Actuator Workshop, P41

[4] High aspect ratio SiO2 etching with high resist selectivity improved by addition of organosilane to tetrafluoroethyl trifluoromethyl ether [J].

Chinzei, Y ;

Feurprier, Y ;

Ozawa, M ;

Kikuchi, T ;

Horioka, K ;

Ichiki, T ;

Horiike, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2000, 18 (01) :158-165

[5]

ELWANSPOEK M, 1998, SILICON MICROMACHINI, P284

[6] Subwavelength antireflection gratings for light emitting diodes and photodiodes fabricated by fast atom beam etching [J].

Ishimori, M ;

Kanamori, Y ;

Sasaki, M ;

Hane, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (6B) :4346-4349

[7] Broadband antireflection gratings for glass substrates fabricated by fast atom beam etching [J].

Kanamori, Y ;

Kikuta, H ;

Hane, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (7B) :L735-L737

[8] High efficient light-emitting diodes with antireflection subwavelength gratings [J].

Kanamori, Y ;

Ishimori, M ;

Hane, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (08) :1064-1066

[9] 100 nm period silicon antireflection structures fabricated using a porous alumina membrane mask [J].

Kanamori, Y ;

Hane, K ;

Sai, H ;

Yugami, H .

APPLIED PHYSICS LETTERS, 2001, 78 (02) :142-143

[10]

KURIYAGAWA T, 2001, P INT S DRY PROC, P117

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