High-quality ZnO thin films grown by fast pulsed laser deposition without a buffer layer.

被引:11
作者
Lin, MZ [1 ]
Su, CT [1 ]
Yan, HC [1 ]
Chern, MY [1 ]
机构
[1] Natl Taiwan Univ, Dept Phys, Taipei 10617, Taiwan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 28-32期
关键词
pulsed laser deposition; fast pulsed laser deposition; ZnO; sapphire; buffer layer; Pendellosung fringes; excitons;
D O I
10.1143/JJAP.44.L995
中图分类号
O59 [应用物理学];
学科分类号
摘要
For the first time, a fast pulsed laser deposition (FPLD) process is presented for the epitaxial growth of ZnO thin films on c-plane sapphire substrates. This process is driven by a 355 nm solid-state laser pulsing at 10 kHz. The ZnO thin films grown by FPLD show a width of similar to 10 arcsec in the X-ray omega-scan and distinct Pendellosung fringes in the theta-2 theta scan of the ZnO(0002) reflection. Photoluminescence spectra reveal sharp donor-bound excitons of similar to 5 meV width and free excitons up to n = 2. Compared to conventional (much slower) PLD, 1-20Hz, the measurements indicate that higher quality ZnO films can be grown by FPLD. In particular, despite the large lattice mismatch, such ZnO films were grown by FPLD directly on sapphire substrates without a buffer layer.
引用
收藏
页码:L995 / L997
页数:3
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