Prospects of manufacturing organic semiconductor-based integrated circuits

被引:54
作者
Lodha, A
Singh, R
机构
[1] Clemson Univ, Dept Chem Engn, Clemson, SC 29634 USA
[2] Clemson Univ, Ctr Silicon Nanelect, Clemson, SC 29634 USA
[3] Clemson Univ, Holcombe Dept Elect & Comp Engn, Clemson, SC 29634 USA
关键词
circuit performance; defects; heat dissipation; manufacturing; organic thin film transistor; reliability;
D O I
10.1109/66.939830
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The driving force for developing organic thin-film transistor (OTFT)-based electronics is the fact that they are flexible, lightweight and have the prospect of low-cost manufacturing. Major barriers in the practical realization of OTFT-based electronic systems are the need for larger power supplies, lower gain, lower switching speeds and reliability problems. New directions leading to changes in the design of transistors, materials used in the fabrication, and processing techniques are warranted for developing process and equipment that can lead to the manufacturing of OTFT-based electronics. For developing dense OTFT-based electronics, the low thermal conductivity (as compared to silicon) of organic semiconductors is a fundamental problem. The use of nanodimension polymers with homogeneous microstructure, transistors operating in subthreshold region and the use of new materials (high and low dielectric constant dielectric materials as wen as Cu as the conductor for interconnections) for fabricating transistors and a novel rapid photothermal processing technique for depositing thin films of organic semiconductors as well as for reducing the defects introduced during processing are some of the proposed directions that may lead to the manufacturing of OTFT-based electronics.
引用
收藏
页码:281 / 296
页数:16
相关论文
共 130 条
[11]   Field-effect transistors made from solution-processed organic semiconductors [J].
Brown, AR ;
Jarrett, CP ;
deLeeuw, DM ;
Matters, M .
SYNTHETIC METALS, 1997, 88 (01) :37-55
[12]   Influence of the doping of the polymer on the dark and photoelectrical properties in the junction ITO/poly(4,4′-dipentoxy-2,2′-bithiophene)/aluminium [J].
Camaioni, N ;
Casalbore-Miceli, G ;
Beggiato, G .
SYNTHETIC METALS, 1999, 104 (03) :169-173
[13]   Stresses in multilayered thin films [J].
Cammarata, RC ;
Bilello, JC ;
Greer, AL ;
Sieradzki, K ;
Yalisove, SM .
MRS BULLETIN, 1999, 24 (02) :34-38
[14]   Design considerations of high-κ gate dielectrics for sub-0.1-μm MOSFET's [J].
Cheng, BH ;
Cao, M ;
Vande Voorde, P ;
Greene, W ;
Stork, H ;
Yu, ZP ;
Woo, JCS .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (01) :261-262
[15]   POLYACETYLENE, (CH)X - N-TYPE AND P-TYPE DOPING AND COMPENSATION [J].
CHIANG, CK ;
GAU, SC ;
FINCHER, CR ;
PARK, YW ;
MACDIARMID, AG ;
HEEGER, AJ .
APPLIED PHYSICS LETTERS, 1978, 33 (01) :18-20
[16]   SPIN-CAST THIN-FILMS OF POLYANILINE [J].
CHINN, D ;
JANATA, J .
THIN SOLID FILMS, 1994, 252 (02) :145-151
[17]   Large-scale complementary integrated circuits based on organic transistors [J].
Crone, B ;
Dodabalapur, A ;
Lin, YY ;
Filas, RW ;
Bao, Z ;
LaDuca, A ;
Sarpeshkar, R ;
Katz, HE ;
Li, W .
NATURE, 2000, 403 (6769) :521-523
[18]  
Crone B., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P115, DOI 10.1109/IEDM.1999.823859
[19]   Applications of electrochemical microfabrication: An introduction [J].
Datta, M .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1998, 42 (05) :563-566
[20]   Stability of n-type doped conducting polymers and consequences for polymeric microelectronic devices [J].
deLeeuw, DM ;
Simenon, MMJ ;
Brown, AR ;
Einerhand, REF .
SYNTHETIC METALS, 1997, 87 (01) :53-59