Growth and characterization of OsO2 single crystals

被引：14

作者：

Yen, PC

Chen, RS

Chen, CC

Huang, YS

Tiong, KK

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan

[2] Natl Taiwan Ocean Univ, Dept Elect Engn, Chilung 202, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 262卷 / 1-4期

关键词：

characterization; X-ray diffraction; single crystal growth; oxides;

D O I：

10.1016/j.jcrysgro.2003.10.021

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Large osmium dioxide (OsO2)(1) single crystals with mirror-like prismatic facets have been successfully grown by the oscillating chemical vapor transport method. X-ray diffraction spectroscopy showed the tetragonal rutile structure and the lattice parameters were determined. The field emission energy dispersive X-ray analysis revealed the atomic ratio of Os to O to be about 1:2. The X-ray photoelectron spectra for both the Os 4f and O 1s core-level features exhibited strongly asymmetric line-shapes character. Temperature-dependent resistivity measurements indicated metallic character and a low room-temperature resistivity of similar to15 muOmega cm for the OsO2 single crystals. The residual resistivity ratio was determined to be 50. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：271 / 276

页数：6

共 16 条

[1] INFLUENCE OF PLATINUM INTERLAYERS ON THE ELECTRICAL-PROPERTIES OF RUO2/PB(ZR0.53TI0.47)O-3/RUO2 CAPACITOR HETEROSTRUCTURES [J].