Zn2LiGaO4, Wurtzite- Derived Wide Band Gap Oxide

被引：25

作者：

Omata, Takahisa ^{[1
]}

Kita, Masao ^{[2
]}

Nose, Katsuhiro ^{[1
]}

Tachibana, Kosuke ^{[1
]}

Otsuka-Yao-Matsuo, Shinya ^{[1
]}

机构：

[1] Osaka Univ, Div Mat & Mfg Sci, Grad Sch Engn, Suita, Osaka 5650871, Japan

[2] Toyama Natl Coll Technol, Dept Ecomat Engn, Toyama 9398630, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 03期

关键词：

CRYSTAL-STRUCTURE; ZINC-OXIDE; GROWTH; ALLOY;

D O I：

10.1143/JJAP.50.031102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The phase that appeared in the pseudo-binary LiGaO2-ZnO system was investigated by powder X-ray diffraction (XRD), selected area electron diffraction by transmission electron microscopy (TEM-SAD) and Raman spectroscopy, especially focusing on the 0.5(LiGaO2)(1/2) - 0.5ZnO composition. A new quaternary wurtzite-derived Zn2LiGaO4 phase was found in this system. The TEM-SAD indicated that the phase possesses an incommensurately modulated ordering. The optical energy band gap of Zn2LiGaO4 was determined to be similar to 4: 0 eV from its diffuse reflectance and photoluminescence spectra; and it was suggested that the Zn2LiGaO4 was a direct semiconductor. (C) 2011 The Japan Society of Applied Physics

引用

页数：4

共 12 条

[1] CRYSTAL STRUCTURE OF LIGAO2 [J].

MAREZIO, M .

ACTA CRYSTALLOGRAPHICA, 1965, 18 :481-&

[2] Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates [J].

Nicholls, JFH ;

Gallagher, H ;

Henderson, B ;

TragerCowan, C ;

Middleton, PG ;

ODonnell, KP ;

Cheng, TS ;

Foxon, CT ;

Chai, BHT .

GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 :535-539

[3] Yellow emission from zinc oxide giving an electron spin resonance signal at g=1.96 [J].

Ohashi, N ;

Nakata, T ;

Sekiguchi, T ;

Hosono, H ;

Mizuguchi, M ;

Tsurumi, T ;

Tanaka, J ;

Haneda, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (2A) :L113-L115

[4] Heteroepitaxial growth of β-LiGaO2 thin films on ZnO [J].

Ohkubo, I ;

Hirose, C ;

Tamura, K ;

Nishii, J ;

Saito, H ;

Koinuma, H ;

Ahemt, P ;

Chikyow, T ;

Ishii, T ;

Miyazawa, S ;

Segawa, Y ;

Fukumura, T ;

Kawasaki, M .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (09) :5587-5589

[5] MgxZn1-xO as a II-VI widegap semiconductor alloy [J].

Ohtomo, A ;

Kawasaki, M ;

Koida, T ;

Masubuchi, K ;

Koinuma, H ;

Sakurai, Y ;

Yoshida, Y ;

Yasuda, T ;

Segawa, Y .

APPLIED PHYSICS LETTERS, 1998, 72 (19) :2466-2468

[6] Wide band gap semiconductor alloy:: x(LiGaO2)1/2-(1-x)ZnO [J].

Omata, Takahisa ;

Tanaka, Keizo ;

Tazuke, Atsushi ;

Nose, Katsuhiro ;

Otsuka-Yao-Matsuo, Shinya .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (08)

[7] A comprehensive review of ZnO materials and devices -: art. no. 041301 [J].

Ozgür, U ;

Alivov, YI ;

Liu, C ;

Teke, A ;

Reshchikov, MA ;

Dogan, S ;

Avrutin, V ;

Cho, SJ ;

Morkoç, H .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (04) :1-103

[8]

PLATTNER H, 1976, MANATSHFTE CHEM, V107, P921

[9] Wide-band gap oxide alloy: BeZnO [J].

Ryu, YR ;

Lee, TS ;

Lubguban, JA ;

Corman, AB ;

White, HW ;

Leem, JH ;

Han, MS ;

Park, YS ;

Youn, CJ ;

Kim, WJ .

APPLIED PHYSICS LETTERS, 2006, 88 (05) :1-2

[10] YELLOW LUMINESCENCE OF ZINC OXIDE [J].

SCHIRMER, OF ;

ZWINGEL, D .

SOLID STATE COMMUNICATIONS, 1970, 8 (19) :1559-&

← 1 2 →