MOS capacitor characteristics of plasma oxide on partially strained SiGeC films

被引：4

作者：

Ray, SK ^{[1
]}

Bera, LK

Maiti, CK

John, S

Banerjee, SK

机构：

[1] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India

[2] Indian Inst Technol, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Bengal, India

[3] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

THIN SOLID FILMS | 1998年 / 332卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

SiGeC; silicon heterostructures; plasma oxide; MOS capacitors;

D O I：

10.1016/S0040-6090(98)01040-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low temperature microwave plasma oxidation of UHV CVD grown partially strain compensated Si1-x-yGexCy (Ge/C = 20:1 and 40:1) with and without a Si cap layer is reported. The electrical properties of grown oxides have been characterized using C-V, G-V, J-E and constant current stressing of metal-oxide-semiconductor capacitors. Fixed oxide charge density and mid-gap interface trap density are found to be 2.9 x 10(11) cm(-2) and 8.8 x 10(11) cm(-2)/eV, respectively, for directly oxidized Si0.79Ge0.2Co0.01 films. The oxide on samples with C concentration of 0.5% exhibits hole trapping, whereas electron trapping is observed for oxides on alloys containing 1.0% carbon. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：375 / 378

页数：4

共 13 条

[1] GROWTH AND STRAIN COMPENSATION EFFECTS IN THE TERNARY SI1-X-YGEXCY ALLOY SYSTEM [J].

EBERL, K ;

IYER, SS ;

ZOLLNER, S ;

TSANG, JC ;

LEGOUES, FK .

APPLIED PHYSICS LETTERS, 1992, 60 (24) :3033-3035

[2] NOVEL PROCESS FOR RELIABLE ULTRATHIN TUNNEL DIELECTRICS [J].

HAO, MY ;

MAITI, B ;

LEE, JC .

APPLIED PHYSICS LETTERS, 1994, 64 (16) :2102-2104

[3] HIGH-PERFORMANCE SI/SIGE N-TYPE MODULATION-DOPED TRANSISTORS [J].

ISMAIL, K ;

RISHTON, S ;

CHU, JO ;

CHAN, K ;

MEYERSON, BS .

IEEE ELECTRON DEVICE LETTERS, 1993, 14 (07) :348-350

[4] GROWTH AND PROPERTIES OF STRAINED SI1-X-YGEXCY LAYERS [J].

JAIN, SC ;

OSTEN, HJ ;

DIETRICH, B ;

RUCKER, H .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (10) :1289-1302

[5]

JOHN S, 1996, P MRS FALL M BOST MA, V40, P275

[6] SIGE GATE OXIDE PREPARED AT LOW-TEMPERATURE IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA [J].

LI, PW ;

YANG, ES .

APPLIED PHYSICS LETTERS, 1993, 63 (21) :2938-2940

[7] Supersaturated carbon in silicon and silicon/germanium alloys [J].

Osten, HJ .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 36 (1-3) :268-274

[8] PHYSICS AND APPLICATIONS OF GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J].

PEOPLE, R .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1696-1710

[9] Novel SiGeC channel heterojunction PMOSFET [J].

Ray, SK ;

John, S ;

Oswal, S ;

Banerjee, SK .

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :261-264

[10] PROPERTIES OF SILICON DIOXIDE FILMS DEPOSITED AT LOW-TEMPERATURES BY MICROWAVE PLASMA ENHANCED DECOMPOSITION OF TETRAETHYLORTHOSILICATE [J].

RAY, SK ;

MAITI, CK ;

LAHIRI, SK ;

CHAKRABARTI, NB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (03) :1139-1150

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