Growth of ZnSxSe1-x layers on Si substrates by atomic layer epitaxy

被引：32

作者：

Hsu, CT ^{[1
]}

机构：

[1] Natl Huwei Inst Technol, Dept Elect Engn, Huwei, Yun Lin, Taiwan

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1999年 / 58卷 / 01期

关键词：

atomic layer epitaxy (ALE); ZnSxSe1-x;

D O I：

10.1016/S0254-0584(98)00238-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atomic layer epitaxy (ALE) by metalorganic vapor epitaxy has been used to grow ZnSxSe1-x epitaxial layers on Si substrates. The dimethylzinc (DMZn), hydrogen sulfide (H2S) and hydrogen selenium (H2Se) used as zinc? sulfur and selenium sources, respectively The dependence of the composition of the ZnSxSe1-x films on H2S, H2Se flow rate and [H2S]/[H2S]+[H2Se] ratio were investigated. The conditions for growing ZnSxSe1-x layer with x = 0.93 (lattice matched on Si) were determined. The characterizations of epilayers were examined by using scanning electron microscope energy dispersive spectrometer, X-ray diffraction and photoluminescence. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：6 / 11

页数：6

共 21 条

[1] MOVPE OF HIGH-QUALITY ZNSE - ROLE OF MISMATCH ON REFLECTIVITY AND PHOTOCONDUCTIVITY [J].

AULOMBARD, RL ;

AVEROUS, M ;

BRIOT, O ;

CALAS, J ;

COQUILLAT, D ;

HAMDANI, F ;

LASCARAY, JP ;

MOULIN, N ;

TEMPIER, N .

JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) :204-207

[2] GROWTH AND CHARACTERIZATION OF HETERO-EPITAXIAL ZINC SELENIDE [J].

BESOMI, P ;

WESSELS, BW .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (03) :477-484

[3] EFFECTS OF LATTICE-MATCHING ON DOPING CHARACTERISTICS OF ZNSXSE1-X EPITAXIAL LAYERS ON GAAS SUBSTRATES GROWN BY OMVPE [J].

FUJITA, S ;

TERADA, K ;

SAKAMOTO, T ;

FUJITA, S .

JOURNAL OF CRYSTAL GROWTH, 1989, 94 (01) :102-108

[4] EFFECT OF MOVPE GROWTH-PARAMETERS ON THE PHOTOLUMINESCENCE LINEWIDTH OF ZNSXSE1-X (0-LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO-1) EPILAYERS ON GAAS [J].

HEUKEN, M ;

GEYZERS, KP ;

SOLLNER, J ;

SCHNEIDER, A ;

GUIMARAES, FEG ;

HEIME, K .

JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :633-638

[5] OMVPE GROWTH OF ZNSE AND ZNSXSE1-X USING METHYLSELENOL AS A SELENIUM SOURCE [J].

HIRATA, SY ;

FUJITA, S ;

ISEMURA, M .

JOURNAL OF CRYSTAL GROWTH, 1990, 104 (02) :521-526

[6] GROWTH AND THERMODYNAMIC ANALYSIS OF ATOMIC LAYER EPITAXY OF ZNSXSE1-X [J].

KOUKITU, A ;

IKEDA, H ;

MIYAZAWA, T ;

SEKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (10B) :L1463-L1466

[7] ATMOSPHERIC-PRESSURE ATOMIC LAYER EPITAXY OF ZNSE USING ZN AND H2SE [J].

KOUKITU, A ;

SAEGUSA, A ;

KITHO, M ;

IKEDA, H ;

SEKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12) :L2165-L2168

[8]

KULDECK G, 1990, J APPL PHYS, V68, P5630

[9] PIEZOMODULATED AND PHOTOMODULATED REFLECTIVITY SPECTRA OF ZNSE/GAAS AND CDTE/INSB EPILAYERS [J].

LEE, YR ;

RAMDAS, AK ;

KOLODZIEJSKI, LA ;

GUNSHOR, RL .

PHYSICAL REVIEW B, 1988, 38 (18) :13143-13149

[10] MBE GROWTH OF HIGH-QUALITY LATTICE-MATCHED ZNSXSE1-X ON GAAS SUBSTRATES [J].

MATSUMURA, N ;

TSUBOKURA, M ;

SARAIE, J ;

YODOGAWA, Y .

JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :311-317

← 1 2 3 →