Low-noise photon counting with a radio-frequency quantum-dot field-effect transistor

被引：27

作者：

Kardynal, BE

Shields, AJ

Beattie, NS

Farrer, I

Cooper, K

Ritchie, DA

机构：

[1] Toshiba Res Europe Ltd, Cambridge CB4 0WE, England

[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 03期

关键词：

D O I：

10.1063/1.1639936

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present photon counting experiments with a single-photon detector based on a field-effect transistor gated by a layer of InAs quantum dots. A cryogenic radio-frequency amplifier is used to convert the photon-induced steps in the source-drain current of the transistor into voltage peaks. We measure a maximum photon detection efficiency of 0.14%, corresponding to internal quantum efficiency of 10%. The dark count rate is less than 10(-8) ns(-1) when the efficiency is 0.045%. (C) 2004 American Institute of Physics.

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页码：419 / 421

页数：3

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