A review of hot-carrier degradation mechanisms in MOSFETs

被引：86

作者：

Acovic, A

LaRosa, G

Sun, YC

机构：

[1] SRDC, IBM Microelectronics, Hopewell Junction

来源：

MICROELECTRONICS AND RELIABILITY | 1996年 / 36卷 / 7-8期

关键词：

D O I：

10.1016/0026-2714(96)00022-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We review the hot-carrier effects and reliability problem in MOSFET. The mechanisms that produce the substrate and gate current are discussed, and the various mechanisms for hot-carrier degradation are presented. DC and AC lifetime models are summarized, and the effects on a CMOS circuit explained. The effects of scaling on the hot-carrier induced degradation are presented and the influence of processing steps and stress temperature discussed. Ways to improve the reliability of MOSFETs are then presented. Finally the reliability of SOI MOSFETs is compared to that of bulk MOSFETs. Copyright (C) 1996 Elsevier Science Ltd.

引用

页码：845 / 869

页数：25

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