Quantum Hall Effect in Twisted Bilayer Graphene

被引：114

作者：

Lee, Dong Su ^{[1
]}

Riedl, Christian ^{[1
]}

Beringer, Thomas ^{[1
]}

Castro Neto, A. H. ^{[2
,3
,4
]}

von Klitzing, Klaus ^{[1
]}

Starke, Ulrich ^{[1
]}

Smet, Jurgen H. ^{[1
]}

机构：

[1] Max Planck Inst Festkoperforsch, D-70569 Stuttgart, Germany

[2] Natl Univ Singapore, Graphene Res Ctr, Singapore 117542, Singapore

[3] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[4] Boston Univ, Dept Phys, Boston, MA 02215 USA

来源：

PHYSICAL REVIEW LETTERS | 2011年 / 107卷 / 21期

关键词：

EPITAXIAL GRAPHENE; BERRYS PHASE; LAYERS;

D O I：

10.1103/PhysRevLett.107.216602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We address the quantum Hall behavior in twisted bilayer graphene transferred from the C face of SiC. The measured Hall conductivity exhibits the same plateau values as for a commensurate Bernal bilayer. This implies that the eightfold degeneracy of the zero energy mode is topologically protected despite rotational disorder as recently predicted. In addition, an anomaly appears. The densities at which these plateaus occur show a magnetic field dependent offset. It suggests the existence of a pool of localized states at low energy, which do not count towards the degeneracy of the lowest band Landau levels. These states originate from an inhomogeneous spatial variation of the interlayer coupling.

引用

页数：5

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