Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers

被引：106

作者：

Chichibu, S

Shikanai, A

Azuhata, T

Sota, T

Kuramata, A

Horino, K

Nakamura, S

机构：

[1] WASEDA UNIV, DEPT ELECT ELECT & COMP ENGN, SHINJUKU KU, TOKYO 169, JAPAN

[2] FUJITSU LABS LTD, ATSUGI, KANAGAWA 24301, JAPAN

[3] NICHIA CHEM IND LTD, DEPT RES & DEV, TOKUSHIMA 774, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 26期

关键词：

D O I：

10.1063/1.116000

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Exciton resonance energies of hexagonal (h-) GaN(0001) epilayers were determined by a combination of high-resolution modulated photoreflectance methods. The results were analyzed thoretically using the Luttinger-Kohn type Hamiltonian for the valence bands under the in-plain biaxial stress, and we obtained the shear deformation potential constants and energy gap in unstrained crystal. Occurrence of the anticrossing of B and C valence bands in tensile biaxially strained h-GaN was suggested. (C) 1996 American Institute of Physics.

引用

页码：3766 / 3768

页数：3

共 28 条

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