Low temperature decomposition mechanism of BaH2 formed on Si(100) surfaces

被引：3

作者：

Ojima, K

Hongo, S ^{[1
]}

Urano, T

机构：

[1] Kobe Univ, Fac Engn, Nada Ku, Kobe, Hyogo 657, Japan

[2] Kobe Univ, Grad Sch Sci & Technol, Nada Ku, Kobe, Hyogo 657, Japan

来源：

SURFACE SCIENCE | 1998年 / 402卷 / 1-3期

关键词：

alkaline earth metals; Auger electron spectroscopy (AES); hydrogen; silicides; silicon; surface chemical reaction; thermal desorption; thermal desorption spectroscopy;

D O I：

10.1016/S0039-6028(97)00952-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The influence of annealing for multilayer-Ba deposited Si(100) prior to hydrogen exposure was investigated in order to explain the mechanism of H-2 desorption from Ba and H coadsorbed Si(100) by means of MDS (metastable de-excitation spectroscopy), AES (Auger electron spectroscopy) and TDS (thermal desorption spectroscopy). AES measurements suggest that annealing > 200 degrees C prior to hydrogen exposure results in the silicide formation inside Ba overlayers. The Ba-H peak for MDS and the H, thermal desorption peak at 280 degrees C start to decrease in intensity at the similar temperature. On the basis of these results, it can be concluded that low temperature decomposition of BaH2 on Si(100) is caused by silicide formation inside BaH2 overlayers. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：150 / 154

页数：5

共 9 条

[1] IDENTIFICATION OF ORDERED ATOMIC STRUCTURES OF BA ON THE SI(100) SURFACE [J].