Characterization of the interface between the top Si and buried oxide in separation by implanted oxygen wafers

被引：3

作者：

Takahashi, M ^{[1
]}

Nakashima, S ^{[1
]}

Kodate, J ^{[1
]}

Ohno, T ^{[1
]}

机构：

[1] NTT Corp, Telecommun Energy Labs, Atsugi, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 9A期

关键词：

soi; interface; internal thermal oxidation; interface trap density;

D O I：

10.1143/JJAP.40.5211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical characteristics of the top Si-buried oxide interface in low-dose separation by implanted oxygen (SIMOX) wafers have been investigated from high-frequency and quasi-static capacitance-voltage (C-V) measurements of the buried metal oxide semiconductor (MOS) diodes proposed here. The structure of the interface has been also analyzed using cross-sectional transmission electron microscopy (XTEM). SIMOX wafers with an internal thermal oxidation (ITOX) process have a fixed charge density of 2.7 x 10(10) cm(-2) and an interface trap density of 5 x 10(9) cm(-2) eV(-1). XTEM analysis revealed the undulation of the interface with ITOX is about I lattice. From the small fixed charge density and the smooth interface, we conclude that the strain field in the top Si-buried oxide interface, is small, and comparable to that of thermal oxide-Si interface. The obtained results indicate that ITOX-SIMOX wafers are useful for the fabrication of fully depleted MOSFETs.

引用

页码：5211 / 5216

页数：6

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