Fabrication of InP-based freestanding microstructures by selective surface micromachining

被引:40
作者
Seassal, C
Leclercq, JL
Viktorovitch, P
机构
[1] Lab. d'Electron., Automat. M., URA CNRS 848, Ecole Centrale de Lyon
关键词
D O I
10.1088/0960-1317/6/2/008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
InP-based microstructuring methods are presented with a view to develop micro opto electro mechanical systems (MOEMS). Fabrication parameters and dimensions of the freestanding structures are determined for specific technological constraints (etching selectivities, anisotropy, sticking phenomena). 1 mu m thick InGaAs deformable cantilevers, bridges and membranes have been fabricated by elimination of around 2 mu m-thick InAlAs sacrificial layers. Showing high aspect ratio, smooth surfaces and high accuracy in thicknesses, these microstructures are perfectly suitable for optical applications.
引用
收藏
页码:261 / 265
页数:5
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