Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETs

被引：16

作者：

Yu, DS ^{[1
]}

Wu, CH

Huang, CH

Chin, A

Chen, WJ

Zhu, CX

Li, MF

Kwong, DL

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Natl Yun Lin Polytech Inst, Dept Mech Mat Engn, Huwei, Taiwan

[3] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 119260, Singapore

[4] Univ Texas, Dept Elect & Comp Engn, Austin, TX 78752 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 12期

关键词：

MOSFET; NiGe; NiSi;

D O I：

10.1109/LED.2003.819274

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated the fully silicided NiSi and germanided NiGe dual gates n- and p-MOSFETs on 1.9 nm thick SiO2 gate dielectric. The extracted work functions of fully NiSi and NiGe gates from thickness-dependent flat band voltage were 4.55 and 5.2 eV respectively, which may provide possible wide work function tuning using NiSi1-xGex. In additional to the lower gate current than Al gate n- and p-MOSFETs, the fully silicided NiSi and germanided NiGe gates MOSFETs show electron and hole mobilities close to universal mobility values with special advantage of process compatible to current VLSI fabrication line.

引用

页码：739 / 741

页数：3

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