Enhancement-mode thin film transistor with nitrogen-doped ZnO channel layer deposited by laser molecular beam epitaxy

被引:46
作者
Zhang, Xin-An [1 ,2 ]
Zhang, Jing-Wen [1 ]
Zhang, Wei-Feng [2 ]
Wang, Dong [1 ]
Bi, Zhen [1 ]
Bian, Xu-Ming [1 ]
Hou, Xun [1 ,2 ,3 ,4 ]
机构
[1] Xian Jiaotong Univ, Key Lab Photon Technol Informat, Xian 710049, Peoples R China
[2] Henan Univ, Sch Phys & Elect, Kaifeng 475001, Peoples R China
[3] Xian Jiaotong Univ, Key Lab Phys Elect & Dev Under Minist Educ, Xian 710049, Peoples R China
[4] Chinese Acad Sci, Xian Inst Opt & Prec Mech, State Key Lab Transient Opt & Photon, Xian 710068, Peoples R China
关键词
L-MBE; zinc oxide; thin film transistor; doping;
D O I
10.1016/j.tsf.2007.09.034
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The thin film transistors (TFTs) based on nitrogen doped zinc oxide (ZnO) were investigated by laser molecular beam epitaxy. The increase of ZnO films' resistivity by nitrogen doping was found and applied in enhancement mode ZnO-TFTs. The ZnO-TFTs with a conventional bottom-gate structure were fabricated on thermally oxidized p-type silicon substrate. Electrical measurement has revealed that the devices operate as an n-channel enhancement mode and exhibit an on/off ratio of 10(4). The threshold voltage is 5.15 V. The channel mobility on the order of 2.66 cm(2) V-1 s(-1) has been determined. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:3305 / 3308
页数:4
相关论文
共 14 条
[1]   Photodetecting properties of ZnO-based thin-film transistors [J].
Bae, HS ;
Yoon, MH ;
Kim, JH ;
Im, S .
APPLIED PHYSICS LETTERS, 2003, 83 (25) :5313-5315
[2]  
BEA HS, 2004, J VAC SCI TECHNOL B, V22, P1191
[3]   Highly sensitive ZnO ozone detectors at room temperature [J].
Bender, M ;
Fortunato, E ;
Nunes, P ;
Ferreira, I ;
Marques, A ;
Martins, R ;
Katsarakis, N ;
Cimalla, V ;
Kiriakidis, G .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (4B) :L435-L437
[4]   Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J].
Carcia, PF ;
McLean, RS ;
Reilly, MH ;
Nunes, G .
APPLIED PHYSICS LETTERS, 2003, 82 (07) :1117-1119
[5]   Thin-film transistors with active layers of zinc oxide (ZnO) fabricated by low-temperature chemical bath method [J].
Cheng, HC ;
Chen, CF ;
Lee, CC .
THIN SOLID FILMS, 2006, 498 (1-2) :142-145
[6]   ZnO-based transparent thin-film transistors [J].
Hoffman, RL ;
Norris, BJ ;
Wager, JF .
APPLIED PHYSICS LETTERS, 2003, 82 (05) :733-735
[7]   Scaling behavior of ZnO transparent thin-film transistors [J].
Hsieh, Hsing-Hung ;
Wu, Chung-Chih .
APPLIED PHYSICS LETTERS, 2006, 89 (04)
[8]   Room temperature fabricated ZnO thin film transistor using high-K Bi1.5Zn1.0Nb1.5O7 gate insulator prepared by sputtering [J].
Kim, Il-Doo ;
Lim, Mi-Hwa ;
Kang, KyongTae ;
Kim, Ho-Gi ;
Choi, Si-Young .
APPLIED PHYSICS LETTERS, 2006, 89 (02)
[9]   Growth of high quality ZnO thin films at low temperature on Si(100) substrates by plasma enhanced chemical vapor deposition [J].
Li, BS ;
Liu, YC ;
Shen, DZ ;
Lu, YM ;
Zhang, JY ;
Kong, XG ;
Fan, XW ;
Zhi, ZZ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2002, 20 (01) :265-269
[10]   Hydrogen passivation effect in nitrogen-doped ZnO thin films [J].
Li, XN ;
Keyes, B ;
Asher, S ;
Zhang, SB ;
Wei, SH ;
Coutts, TJ ;
Limpijumnong, S ;
Van de Walle, CG .
APPLIED PHYSICS LETTERS, 2005, 86 (12) :1-3