Investigations on GaAsSbN/GaAs quantum wells for 1.3-1.55 μm emission

被引：47

作者：

Harmand, JC

Ungaro, G

Ramos, J

Rao, EVK

Saint-Girons, G

Teissier, R

Le Roux, G

Largeau, L

Patriarche, G

机构：

[1] France Telecom R&D, Lab CDP, Unite Associee CNRS, URA250, F-92225 Bagneux, France

[2] CNRS, L2M, F-92225 Bagneux, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

laser epitaxy; molecular beam epitaxy; antimonides; nitrides; semiconducting III-V materials; optical fiber devices;

D O I：

10.1016/S0022-0248(01)00765-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated the molecular-beam epitaxy and the properties of GaAsSbN compound with a low N content in quantum well structures on GaAs. This alloy appears to be an interesting alternative for GaAs-based devices emitting in the 1.3-1.55 mum wavelength range. Favorable comparison with the GaInAsN alloy is presented in terms of emission at longer wavelengths. Photoluminescence and annealing studies of GaAsSbN showed characteristics comparable to those already reported for GaInAsN. Carrier recombinations are dominated by extrinsic transitions in as-grown samples. Thermal anneal drastically improves the photoluminescence properties. (C) 2001 Elsevier Science B.V. All rights reserved.

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页码：553 / 557

页数：5

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