High-power InGaN-based blue laser diodes with a long lifetime

被引：24

作者：

Nakamura, S ^{[1
]}

机构：

[1] Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 774, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 195卷 / 1-4期

关键词：

GaN; InGaN; quantum well; laser; lifetime; lateral overgrowth;

D O I：

10.1016/S0022-0248(98)00624-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The InGaN multi-quantum-well-structure laser diode (LD) was grown on an epitaxially, laterally overgrown GaN on sapphire. The lowest threshold current densities between 1.2 and 2.8 kA/cm(2) were obtained when the number of InGaN well layer was 2. The LDs showed an output power as high as 420 mW per facet under room-temperature (RT) continuous-wave (CW) operation. The fundamental transverse mode was observed up to an output power of 100 mW. The lifetime of the LDs at a constant output power of 30 mW was 250 h under CW operation at an ambient temperature of 50 degrees C. The longest lifetime of 4800 h at a constant output power of 2 mW under RT-CW operation was achieved. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：242 / 247

页数：6

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