Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on Sic

被引：24

作者：

Meneghesso, G ^{[1
]}

Pierobon, R ^{[1
]}

Rampazzo, F ^{[1
]}

Tamiazzo, G ^{[1
]}

Zanoni, E ^{[1
]}

Kordos, JBP ^{[1
]}

Basile, AF ^{[1
]}

Chini, A ^{[1
]}

Verzelles, G ^{[1
]}

机构：

[1] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

来源：

2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL | 2005年

关键词：

D O I：

10.1109/RELPHY.2005.1493122

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Long term on-state and off-state stress on GaN/AlGaN/GaN HEMTs on SiC substrates are presented. Hot carrier effects and their dependence on bias conditions are evaluated with electroluminescence measurements. Both hot-electron stress conditions produce drain current gate-lag dispersion and gate current decrease. However on- and off- state stresses induce degradation in different gate-to drain surface device regions, i.e. close to the drain contact for the on-state stress and close to the gate contact in the off state stress. Furthermore a correlation between gate-leakage current and gate-lag dispersion is also observed.

引用

页码：415 / 422

页数：8

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