A two-step low pressure chemical vapour deposition process for the production of tungsten metal thin films

被引：4

作者：

Baxter, DV

Caulton, KG

Chisholm, MH ^{[1
]}

Chuang, SH

Minear, CD

机构：

[1] Indiana Univ, Dept Chem, Bloomington, IN 47405 USA

[2] Indiana Univ, Dept Phys, Bloomington, IN 47405 USA

来源：

CHEMICAL COMMUNICATIONS | 1998年 / 14期

关键词：

D O I：

10.1039/a802202j

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A two-step process for the production of W-(m) thin films on Si(100) and SiO2/Si(100) is described involving the initial low pressure chemical vapour deposition of tungsten carbide from ((BuCH2)-C-t)(3)W drop CBut at 350 degrees C followed by a posttreatment with H-2 (500-700 degrees C) or H-2 plasma at 350-700 degrees C.

引用

收藏

页码：1447 / 1448

页数：2

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