Low temperature epitaxial growth by LEPECVD

被引：18

作者：

Rosenblad, C ^{[1
]}

Deller, HR ^{[1
]}

Graf, T ^{[1
]}

Muller, E ^{[1
]}

von Kanel, H ^{[1
]}

机构：

[1] ETH Zurich, Festkorperphys Lab, CH-8093 Zurich, Switzerland

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 188卷 / 1-4期

关键词：

plasma enhanced CVD; CVD; epitaxy; silicon-germanium;

D O I：

10.1016/S0022-0248(98)00061-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Low-energy DC-plasma-enhanced chemical Vapor deposition (LEPECVD) is a novel technique for low-temperature epitaxial growth. A DC voltage are discharge operated at a current I-arc = 2-70 A is responsible for the dissociation of the reactive gases SiH4 and GeH4, and a very efficient hydrogen removal from the surface. The resulting growth rates at which epitaxial growth can be achieved are in the nm/s range for substrate temperatures substantially below 600 degrees C. Sice superlattices and step-graded buffers are examples of structures we have realized by LEPECVD. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：125 / 130

页数：6

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