Silicon quantum integrated circuits -: an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques

An introduction to the methodology, design concepts, fabrication routes and potential applications is presented of research to fabricate quantum devices on a complementary metal oxide semiconductor (CMOS) fabrication line. Si/Si1-xGex heterostructure field effect transistors, velocity modulation transistors and resonant tunnelling diodes are considered and initial fabrication stages discussed. (C) 1998 Elsevier Science S.A. All rights reserved.