High temperature photoluminescence efficiency and thermal stability of (InGa)(AsN)/GaAs quantum wells

被引：17

作者：

Bissiri, M

Gaspari, V

Polimeni, A

von Högersthal, GBH

Capizzi, M

Frova, A

Fischer, M

Reinhardt, M

Forchel, A

机构：

[1] Univ Roma La Sapienza, Ist Nazl Fis Mat, I-00185 Rome, Italy

[2] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy

[3] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 16期

关键词：

D O I：

10.1063/1.1409333

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of the photoluminescence (PL) efficiency of (InGa)(AsN)/GaAs single quantum wells (QWs) has been studied from 10 to 500 K. The PL intensity of N-containing samples is almost constant from room temperature to 500 K, in contrast to what is observed in (InGa)As QWs grown under the same conditions. This thermal stability increases for an increase in nitrogen content. We discuss these effects in terms of strain compensation at high nitrogen concentrations. (C) 2001 American Institute of Physics.

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页码：2585 / 2587

页数：3

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